semiconductor group 1 pnp silicon switching transistor pzt 3906 5.91 maximum ratings type ordering code (tape and reel) marking package 1) pin configuration pzt 3906 q62702-z2030 zt 3906 sot-223 1 2 3 4 b c e c parameter symbol values unit collector-emitter voltage v ce0 40 v collector-base voltage v cb0 40 emitter-base voltage v eb0 5 collector current i c 200 ma total power dissipation, t s =80?c p tot 1.5 w junction temperature t j 150 ?c storage temperature range t stg C 65 + 150 thermal resistance junction - ambient 2) r th ja 117 k/w junction - soldering point r th js 47 1) for detailed information see chapter package outlines. 2) package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm 2 cu. l high dc current gain 0.1 ma to 100 ma l low collector-emitter saturation voltage l complementary type: pzt 3904 (npn)
semiconductor group 2 pzt 3906 electrical characteristics at t a = 25 ?c, unless otherwise specified. unit values parameter symbol min. typ. max. dc characteristics v collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ce0 40 C C collector-base breakdown voltage i c = 10 m a, i b = 0 v (br)cb0 40 C C emitter-base breakdown voltage i e = 10 m a, i c = 0 v (br)eb0 5CC na collector-base cutoff current v cb = 30 v, i e = 0 i cb0 CC50 collector-emitter cutoff current v ce = 30 v, + v be = 0.5 v i cev CC50 C dc current gain 1) i c = 0.1 ma , v ce = 1 v i c = 1 ma , v ce = 1 v i c = 10 ma , v ce = 1 v i c = 50 ma , v ce = 1 v i c = 100 ma , v ce = 1 v h fe 60 80 100 60 30 C C C C C C C 300 C C v collector-emitter saturation voltage 1) i c = 10 ma , i b = 1 ma i c = 50 ma , i b = 5 ma v cesat C C C C 0.25 0.4 base-emitter saturation voltage 1) i c = 10 ma , i c = 1 ma i c = 50 ma , i c = 5 ma v besat C C C C 0.85 0.95 collector-base cutoff current v ce = 30 v, + v be = 0.5 v i bev CC50 1) pulse test conditions: t 300 m s, d = 2 %
semiconductor group 3 pzt 3906 electrical characteristics at t a = 25 ?c, unless otherwise specified. mhz transition frequency i c = 10 ma , v ce = 20 v, f = 100 mhz f t 250 C C pf collector-base capacitance v cb = 5 v, f = 1 mhz c obo C C 4.5 ac characteristics unit values parameter symbol min. typ. max. input capacitance v eb = 0.5 v, f = 1 mhz c ibo CC10 db noise figure i c = 100 m a , v ce = 5 v, r s = 1 k w , f = 10 hz to 15.7 khz f CC4 k w input impedance i c = 1 ma , v ce = 10 v, f = 1 khz h 11e 2C12 10 C4 open-circuit reverse voltage transfer ratio i c = 1 ma , v ce = 10 v, f = 1 khz h 12e 0.1 C 10 C short-circuit forward current transfer ratio i c = 1 ma , v ce = 10 v, f = 1 khz h 21e 100 C 400 m s open-circuit output admittance i c = 1 ma , v ce = 10 v, f = 1 khz h 22e 3C60 ns ns ns ns v cc = 3 v, i c = 10 ma , i b1 = 1 ma v be(off) = 0.5 v delay time rise time v cc = 3 v, i c = 10 ma , i b1 = i b2 = 1 ma storage time fall time (see diagrams) t d t r t stg t f C C C C C C C C 35 35 225 75
semiconductor group 4 pzt 3906 switching times turn-on time when switched from + v beoff = 0.5 v to Cv beon = 10.6 v , C i con = 10 ma; Ci bon = 1 ma input waveform; t r < 1 ns; t p = 300 ns; delay and rise time test circuit; total shunt d = 0.02. capacitance of test jig and connectors c s < 4 pf; scope impedance = 10 m w . turn-off time i con = 10 ma; i bon = C i boff = 1 ma storage and fall time test circuit; total shunt capacitance of test jig and connectors c s < 4 pf; scope impedance = 10 m w . input waveform; t f < 1 ns; 10 m s < t p 500 m s; d = 0.02.
semiconductor group 5 pzt 3906 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy dc current gain h fe = f ( i c ) v ce = 1 v, normalized saturation voltage i c = f ( v besat , v cesat ) h fe =10 permissible pulse load p tot max / p tot dc = f ( t p )
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